Fursin, L. : rechercher sur Z-Library

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1

Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Li, Xue Qing, Tone, Kiyoshi, Cao, Li Hui, Alexandrov, Petre, Fursin, Leonid, Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2000

Fichier:

PDF, 344 KB

2000

2

[IEEE 2002 IEEE Industry Applications Society Annual Meeting - Pittsburgh, PA, USA (13-18 Oct. 2002)] Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) - An IGBT and MOSFET gated SiC bipolar junction transistor

Huijie Yu,, Lai, J., Li, X., Luo, Y., Fursin, L., Zhao, J.H., Alexandrov, P., Wright, B., Weiner, M.

Année:

2002

Langue:

english

Fichier:

PDF, 558 KB

english, 2002

3

On the temperature coefficient of 4H-SiC BJT current gain

X Li, Y Luo, L Fursin, J.H Zhao, M Pan, P Alexandrov, M Weiner

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 384 KB

english, 2003

4

Milepost GCC: Machine Learning Enabled Self-tuning Compiler

Grigori Fursin, Yuriy Kashnikov, Abdul Wahid Memon, Zbigniew Chamski, Olivier Temam, Mircea Namolaru, Elad Yom-Tov, Bilha Mendelson, Ayal Zaks, Eric Courtois, Francois Bodin, Phil Barnard, Elton Ashto

Journal:

International Journal of Parallel Programming

Année:

2011

Langue:

english

Fichier:

PDF, 928 KB

english, 2011

5

Demonstration of the first SiC power integrated circuit

Kuang Sheng, Yongxi Zhang, Ming Su, Jian H. Zhao, Xueqing Li, Petre Alexandrov, Leonid Fursin

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 2.47 MB

english, 2008

6

High performance 1500 V 4H-SiC junction barrier Schottky diodes

Zhao, J.H., Alexandrov, P., Fursin, L., Feng, Z.C., Weiner, M.

Journal:

Electronics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 249 KB

english, 2002

7

A fast and accurate method for determining a lower bound on execution time

G. Fursin, M. F. P. O'Boyle, O. Temam, G. Watts

Journal:

Concurrency and Computation: Practice and Experience

Année:

2004

Langue:

english

Fichier:

PDF, 212 KB

english, 2004

8

Normally-off 4H-SiC trench-gate MOSFETs with high mobility

J. Wu, J. Hu, J.H. Zhao, X. Wang, X. Li, L. Fursin, T. Burke

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 480 KB

english, 2008

9

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

Jianhui Zhang, Xueqing Li, Alexandrov, P., Fursin, L., Xiaohui Wang, Zhao, J.H.

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2008

10

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

Yongxi Zhang,, Xiangyang Hu,, Zhao, J.H., Kuang Sheng,, Cannon, W.R., Xiaohui Wang,, Fursin, L.

Journal:

IEEE Transactions on Components and Packaging Technologies

Année:

2009

Langue:

english

Fichier:

PDF, 504 KB

english, 2009

11

[IEEE 2013 IEEE Applied Power Electronics Conference and Exposition - APEC 2013 - Long Beach, CA, USA (2013.03.17-2013.03.21)] 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) - 7.5 kV 4H-SiC GTO's for power conversion

Fursin, Leonid, Hostetler, John, Li, Xueqing, Fox, Matthew, Alexandrov, Petre, Hoffmann, Frank, Holveck, Mark

Année:

2013

Langue:

english

Fichier:

PDF, 854 KB

english, 2013

12

[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - 3.6 mΩcm/sup 2/, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs

Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M.

Année:

2003

Langue:

english

Fichier:

PDF, 291 KB

english, 2003

13

[IEEE 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014 - Fort Worth, TX, USA (2014.03.16-2014.03.20)] 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014 - Study of SiC vertical JFET behavior during unclamped inductive switching

Li, Xueqing, Bhalla, Anup, Alexandrov, Petre, Fursin, Leonid

Année:

2014

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2014

14

A high current gain 4H-SiC NPN power bipolar junction transistor

Jianhui Zhang,, Luo, Y., Alexandrov, P., Fursin, L., Zhao, J.H.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 371 KB

english, 2003

15

[IEEE 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Knoxville, TN, USA (2014.10.13-2014.10.15)] 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications - 6.5 kV SiC normally-off JFETs — Technology status

Hostetler, J. L., Alexandrov, P., Li, X., Fursin, L., Bhalla, A.

Année:

2014

Langue:

english

Fichier:

PDF, 493 KB

english, 2014

16

[ACM Press the 4th International Workshop - Vienna, Austria (2016.04.19-2016.04.21)] Proceedings of the 4th International Workshop on OpenCL - IWOCL '16 - Optimizing convolutional neural networks on embedded platforms with OpenCL

Lokhmotov, Anton, Fursin, Grigori

Année:

2016

Langue:

english

Fichier:

PDF, 983 KB

english, 2016

17

Demonstration of 1789 V, 6.68 m [middle dot] cm2 4H-SiC merged-PiN-Schottky diodes

Zhao, J.H., Fursin, L., Jiao, L., Li, X., Burke, T.

Journal:

Electronics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 205 KB

english, 2004

18

[ACM Press the 1st - Williamsburg, VA, USA (2018.04.24-2018.04.24)] Proceedings of the 1st on Reproducible Quality-Efficient Systems Tournament on Co-designing Pareto-efficient Deep Learning - ReQuEST '18 - Multi-objective autotuning of MobileNets across the full software/hardware stack

Lokhmotov, Anton, Chunosov, Nikolay, Vella, Flavio, Fursin, Grigori

Année:

2018

Langue:

english

Fichier:

PDF, 2.43 MB

english, 2018

19

Corrections to: âFirst-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide,â

Jaeger, Richard C., Chen, Jun, Suhling, Jeffrey C., Fursin, Leonid

Journal:

IEEE Sensors Journal

Année:

2020

Fichier:

PDF, 174 KB

2020

20

Recognition of handwritten symbols in the process of writing

V. I. Rybak, G. I. Fursin

Journal:

Cybernetics and Systems Analysis

Année:

1972

Langue:

english

Fichier:

PDF, 880 KB

english, 1972

21

Synthesis of an operational graphic-data input device for the BÉSM-6 digital computer

V. I. Gumenyuk-Sychevskii, G. I. Fursin

Journal:

Cybernetics and Systems Analysis

Année:

1972

Langue:

english

Fichier:

PDF, 214 KB

english, 1972

22

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - 4H-SiC BJT and Darlington switch for power inverter applications

Li, X., Luo, Y., Fursin, L., Zhao, J.H., Pan, M., Alexandrov, P., Weiner, M.

Année:

2001

Langue:

english

Fichier:

PDF, 284 KB

english, 2001

23

[IEEE 18th Annual Applied Power Electronics Conference - APEC 2003 - Miami Beach, FL, USA (9-13 Feb. 2003)] Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03. - A gate driver based soft-switching SiC bipolar junction transistor

Yu, H., Lai, J., Huang, X., Zhao, J.H., Zhang, J., Hu, X., Carter, J., Fursin, L.

Année:

2003

Langue:

english

Fichier:

PDF, 519 KB

english, 2003

24

3.6 mΩ cm2, 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications

Zhao, J.H., Tone, K., Li, X., Alexandrov, P., Fursin, L., Weiner, M.

Journal:

IEE Proceedings - Circuits Devices and Systems

Année:

2004

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2004

25

Fabrication and characterization of high current gain (β=430) and high power (23 A-500 V) 4H-SiC hybrid Darlington bipolar transistor

Yanbin Luo, Jianhui Zhang, Alexandrov, P., Fursin, L., Zhao, J.H.

Journal:

IEEE Transactions on Electron Devices

Année:

2004

Langue:

english

Fichier:

PDF, 535 KB

english, 2004

26

Development of 4H-SiC LJFET-Based Power IC

Yongxi Zhang, Kuang Sheng, Ming Su, Zhao, J.H., Alexandrov, P., Xueqing Li, Fursin, L., Weiner, M.

Journal:

IEEE Transactions on Electron Devices

Année:

2008

Langue:

english

Fichier:

PDF, 2.19 MB

english, 2008

27

Nickel ohmic contacts to p- and n-type 4H-SiC

Fursin, L.G., Zhao, J.H., Weiner, M.

Journal:

Electronics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 233 KB

english, 2001

28

[IEEE 2011 IEEE Vehicle Power and Propulsion Conference (VPPC) - Chicago, IL, USA (2011.09.6-2011.09.9)] 2011 IEEE Vehicle Power and Propulsion Conference - Solid-state disconnects based on SiC power JFETs

Alexandrov, P., Li, X., Fursin, L., Dries, C., Zhao, J., Burke, T.

Année:

2011

Langue:

english

Fichier:

PDF, 893 KB

english, 2011

29

1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov, L. Fursin

Journal:

IEEE Electron Device Letters

Année:

2007

Langue:

english

Fichier:

PDF, 222 KB

english, 2007

30

4H-SiC normally-off vertical junction field-effect transistor with high current density

Tone, K., Zhao, J.H., Fursin, L., Alexandrov, P., Weiner, M.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 543 KB

english, 2003

31

4.3 kV 4H-SiC merged PiN/Schottky diodes

Wu, Jian, Fursin, Leonid, Li, Yuzhu, Alexandrov, Petre, Weiner, M, Zhao, J H

Journal:

Semiconductor Science and Technology

Année:

2006

Langue:

english

Fichier:

PDF, 269 KB

english, 2006

32

[IEEE 61st Device Research Conference - Salt Lake City, UT, USA (23-25 June 2003)] 61st Device Research Conference. Conference Digest (Cat. No.03TH8663) - Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

Yanbin Luo,, Jianhui Zhang,, Alexandrov, P., Fursin, L., Zhao, J.H.

Année:

2003

Langue:

english

Fichier:

PDF, 101 KB

english, 2003

33

[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - A novel high power bipolar transistor in 4H-SiC

Zhao, J.H., Li, X., Fursin, L., Alexandrov, P., Pan, M., Weiner, M., Burke, T., Khalil, G.

Année:

2001

Langue:

english

Fichier:

PDF, 256 KB

english, 2001

34

[ACM Press the 4th international conference - Ischia, Italy (2007.05.07-2007.05.09)] Proceedings of the 4th international conference on Computing frontiers - CF '07 - Fast compiler optimisation evaluation using code-feature based performance prediction

Dubach, Christophe, Cavazos, John, Franke, Björn, Fursin, Grigori, O'Boyle, Michael F.P., Temam, Olivier

Année:

2007

Langue:

english

Fichier:

PDF, 400 KB

english, 2007

35

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Yanbin Luo,, Jianhui Zhang,, Alexandrov, P., Fursin, L., Zhao, J.H., Burke, T.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 435 KB

english, 2003

36

1710-V 2.77-m/spl Omega/cmsub 2 4H-SiC trenched and implanted vertical junction field-effect transistors

Zhao, J.H., Tone, K., Alexandrov, P., Fursin, L., Weiner, M.

Journal:

IEEE Electron Device Letters

Année:

2003

Langue:

english

Fichier:

PDF, 543 KB

english, 2003

37

[IEEE 2005 International Conference on Parallel Processing Workshops (ICPPW'05) - Oslo, Norway (14-17 June 2005)] 2005 International Conference on Parallel Processing Workshops (ICPPW'05) - A Heuristic Search Algorithm Based on Unified Transformation Framework

Shun Long,, Fursin, G.

Année:

2005

Langue:

english

Fichier:

PDF, 164 KB

english, 2005

38

[IEEE International Symposium on Code Generation and Optimization (CGO'06) - New York, NY, USA (26-29 March 2006)] International Symposium on Code Generation and Optimization (CGO'06) - Using Machine Learning to Focus Iterative Optimization

Agakov, F., Bonilla, E., Cavazos, J., Franke, B., Fursin, G., O'Boyle, M.F.P., Thomson, J., Toussaint, M., Williams, C.K.I.

Année:

2006

Langue:

english

Fichier:

PDF, 369 KB

english, 2006

39

[IEEE 2012 SC Companion: High Performance Computing, Networking, Storage and Analysis (SCC) - Salt Lake City, UT (2012.11.10-2012.11.16)] 2012 SC Companion: High Performance Computing, Networking Storage and Analysis - Poster: Collective Tuning: Novel Extensible Methodology, Framework and Public Repository to Collaboratively Address Exascale Challenges

Fursin, Grigori

Année:

2012

Langue:

english

Fichier:

PDF, 1.80 MB

english, 2012

40

[IEEE 2012 SC Companion: High Performance Computing, Networking, Storage and Analysis (SCC) - Salt Lake City, UT (2012.11.10-2012.11.16)] 2012 SC Companion: High Performance Computing, Networking Storage and Analysis - Abstract: cTuning.org: Novel Extensible Methodology, Framework and Public Repository to Collaboratively Address Exascale Challenges

Fursin, Grigori

Année:

2012

Langue:

english

Fichier:

PDF, 47 KB

english, 2012

41

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Demonstration of the first power IC on 4H-SiC

Zhao, J. H., Zhang, Y., Su, M., Sheng, K., Alexandrov, P., Fursin, L.

Année:

2007

Langue:

english

Fichier:

PDF, 351 KB

english, 2007

42

Deconstructing iterative optimization

Chen, Yang, Fang, Shuangde, Huang, Yuanjie, Eeckhout, Lieven, Fursin, Grigori, Temam, Olivier, Wu, Chengyong

Journal:

ACM Transactions on Architecture and Code Optimization

Année:

2012

Langue:

english

Fichier:

PDF, 4.40 MB

english, 2012

43

Fabrication and Characterization of 4H-SiC GTOs and Diodes

Fursin, Leonid, Tone, Kiyoshi, Luo, Yan Bin, Alexandrov, Petre, Cao, Li Hui, Zhao, Jian H., Weiner, M., Pan, M.

Journal:

Materials Science Forum

Année:

2000

Fichier:

PDF, 354 KB

2000

44

SiC Solid-State Disconnect for High Power System Applications

Li, Xue Qing, Alexandrov, Petre, Fursin, Leonid, Dries, Christopher, Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 2.67 MB

english, 2012

45

4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET

Zhao, Jian H., Fursin, Leonid, Alexandrov, Petre, Li, Larry X., Weiner, M.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2004

46

4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

Alexandrov, Petre, Wright, B., Pan, M., Weiner, M., Fursin, Leonid, Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 343 KB

2002

47

1,530V, 17.5mΩcm2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Fursin, Leonid, Li, Larry X., Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2004

48

4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer

Wu, J., Fursin, Leonid, Li, Yu Zhu, Alexandrov, Petre, Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 230 KB

english, 2004

49

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Luo, Yan Bin, Fursin, Leonid, Zhao, Jian H., Alexandrov, Petre, Wright, B., Weiner, M.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 340 KB

2002

50

2.5KV-30A Inductively Loaded Half-Bridge Inverter Switching using 4H-SiC MPS Free-Wheeling Diodes

Li, Yu Zhu, Fursin, Leonid, Wu, J., Alexandrov, Petre, Zhao, Jian H.

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 207 KB

english, 2004